Quantum wells based structures tested by photoreflectance anisotropy spectroscopy at room temperature

We report the visualization of interface optical anisotropies in III-V semiconductor based coupled double quantum wells by using photoreflectance anisotropy spectroscopy. Interfacial optical anisotropies were detected from buried layers with quantum dimensions at room temperature through a piezoelectric shear strain. The discrete transitions associated to coupled double quantum wells were observed in near-infrared range, specifically in the second telecommunication band. We propose to use this extended photoreflectance spectroscopy through a polarization contrast as a simple and complementary optical method for analyzing anisotropic quantum structures with polarizable defects or anti-symmetries.

Keywords: Semiconductors, Photoreflectance, Quantum wells, Optical anisotropies.