A new route for the synthesis of Sn3Sb2S6 thin films by chemical deposition

  • E. Barrios-Salgado
  • Y. Rodríguez-Lazcano
  • J. P. Pérez-Orozco
  • A. R. Garcia-Angelmo
Keywords: sulfosalt thin films, chemical deposition, Sn3Sb2S6, thermal annealing process

Abstract

In this work, SnS-Sb2S3 stack films were formed by sequential chemical deposition, and then they were annealed in a nitrogen atmosphere to synthesize Sn3Sb2S6 thin films successfully.  The structural and optical properties were studied by X-ray diffraction and transmittance and reflectance. All the samples show a high absorption coefficient of > 105 cm-1 in the visible region. Their optical bandgap and refractive index are between 1.6-1.8 eV and 3.00-2.71, respectively, which decrease with the increase of film thickness. The electrical conductivity is in the range of 10-8 to 10-7−1 cm−1. The light-generated current density (JL) is presented as a function of Sn3Sb2S6 film thickness when exposed to air mass 1.5 global (AM1.5G) and solar radiation intensity of 1000 W/m2. In short, Sn3Sb2S6 thin films obtained via the proposed new route exhibit appropriate properties for solar cell applications.

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Published
2020-02-16
How to Cite
Barrios-Salgado, E., Rodríguez-Lazcano, Y., Pérez-Orozco, J. P., & Garcia-Angelmo, A. R. (2020). A new route for the synthesis of Sn3Sb2S6 thin films by chemical deposition. Revista Mexicana De Ingeniería Química, 19(3), 1363-1373. https://doi.org/10.24275/rmiq/Mat1061

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