QUANTUM WELLS BASED STRUCTURES TESTED BY PHOTOREFLECTANCE ANISOTROPY SPECTROSCOPY AT ROOM TEMPERATURE

  • J.V. González-Fernández
  • R. Díaz de león-Zapata
  • E. Flores-García
  • J. Ortega-Gallegos
Keywords: Semiconductors, Photoreflectance, Quantum wells, Optical anisotropies

Abstract

We report the visualization of interface optical anisotropies in III-V semiconductor based coupled double quantum wells by using photoreflectance anisotropy spectroscopy. Interfacial optical anisotropies were detected from buried layers with quantum dimensions at room temperature through a piezoelectric shear strain. The discrete transitions associated to coupled double quantum wells were observed in near-infrared range, specifically in the second telecommunication band. We propose to use this extended photoreflectance spectroscopy through a polarization contrast as a simple and complementary optical method for analyzing anisotropic quantum structures with polarizable defects or anti-symmetries.

Published
2019-06-05
How to Cite
González-Fernández, J., Díaz de león-Zapata, R., Flores-García, E., & Ortega-Gallegos, J. (2019). QUANTUM WELLS BASED STRUCTURES TESTED BY PHOTOREFLECTANCE ANISOTROPY SPECTROSCOPY AT ROOM TEMPERATURE. Revista Mexicana De Ingeniería Química, 18(3), 825-830. Retrieved from http://rmiq.org/ojs311/index.php/rmiq/article/view/201